Title:
THIN FILM OF BORON-CONTAINING ALUMINUM NITRIDE AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3465345
Kind Code:
B2
Abstract:
PURPOSE: To obtain a thin film of boron-contg. aluminum nitride having higher hardness, a wider band gap and a faster sound velocisty than AlN by forming a thin film on a substrate by a specified method using Al, B, AlN, BN or an Al-B alloy as a target.
CONSTITUTION: A thin film of boron-contg. aluminum nitride represented by the formula (where 0.001≤x≤0.7 and 0.85≤y≤1.05) is formed on a substrate by a sputtering method using materials selected from among Al, B, AlN, BN and an Al-B alloy as targets in an atmosphere of gas contg. nitrogen or ammonia to obtain the objective thin film having a compsn. represented by the formula, a wurtzite type crystal structure and 10-30μm thickness. This thin film easily undergoes the control of valence electrons and has satisfactory crystallinity.
Inventors:
Takahiro Imai
Yoshiharu Utsumi
Naoji Fujimori
Yoshiharu Utsumi
Naoji Fujimori
Application Number:
JP11652494A
Publication Date:
November 10, 2003
Filing Date:
May 30, 1994
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B25/02; C23C16/34; C30B25/06; C30B29/38; (IPC1-7): C30B29/38; C30B25/02; C30B25/06
Domestic Patent References:
| JP471370A | ||||
| JP59217700A | ||||
| JP310074A | ||||
| JP5255848A | ||||
| JP7267787A | ||||
| JP593098A | ||||
| JP1232695A | ||||
| JP6316402A | ||||
| JP7232998A | ||||
| JP8239752A | ||||
| JP9125229A |
Attorney, Agent or Firm:
Minoru Nakano
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