THIN FILM CAPACITIVE ELEMENT

Title:

THIN FILM CAPACITIVE ELEMENT

Document Type and Number:

Japanese Patent JPH06112082

Kind Code:

A

Abstract:

PURPOSE: To obtain a thin film capacitive element which is small in leakage current, small in surface area, and large in charge storage by a method wherein specific material is added to a crystalline lead-free dielectric body of perovskite structure.

CONSTITUTION: A dielectric layer is formed of dielectric material of perovskite structure represented by a general formula ABO3, where A is an element selected from strontium, barium, and calcium, and B denotes either of titanium and zirconium. At least, 0.05 to 0.3at.% of an element selected from vanadium, niobium, tantalum, antimony, bismuth, lanthanum, cerium, praseodymium, samarium, neodymium, gadolinium, or polonium is added to the above dielectric material. As the added element functions as donor, a flow of electron due to diffusion can be ensured, and consequently a thin film capacitive element can be lessened in leakage current even if a thin dielectric layer is used.

Inventors:

KOMATSU SHUICHI
ABE KAZUHIDE
YAMASHITA YOHACHI

Application Number:

JP25782492A

Publication Date:

April 22, 1994

Filing Date:

September 28, 1992

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01G4/33; H01G4/06; H01G4/10; H01G4/12; H01L21/822; H01L21/8242; H01L27/04; H01L27/10; H01L27/108; (IPC1-7): H01G4/06; H01G4/10; H01G4/12; H01L27/04

Attorney, Agent or Firm:

Hidekazu Miyoshi (1 outside)

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