To obtain a thin film capacitor in which no crystal grain boundary exists or only a very small number of crystal grain boundaries exist, if any, in a high-dielectric or ferroelectric thin film.

A seed section 6 which functions as the crystallization starting point of a high-dielectric or ferroelectric thin film 4 is only formed in one very small region on the surface of a lower electrode 3 and one crystal grain of the thin film 4 can be grown around the region where the seed section 6 exists by starting the crystallization from the section 6. When an upper electrode 5 which is smaller than the grown crystal grain is formed at the position where the crystal grain is formed, a thin film capacitor 10 containing no crystal grain boundary can be obtained.