Title:
THIN FILM CAPACITOR AND MANUFACTURE OF THE SAME
Document Type and Number:
Japanese Patent JPS62158311
Kind Code:
A
Abstract:
A thin film capacitor is formed of a thin crystalline electrically insulative or semiconductive substrate. With the insulative substrate a thin conductive metal layer is deposited on the substrate and a thin film of a crystalline strontium barium niobate deposited on the thin conductive metal layer so that its 2.77 A spaced atomic planes are oriented in a non-perpendicular manner to the substrate and an additional thin conductive layer is deposited on the surface of the strontium barium niobate film. When a semiconductive substrate is employed the strontium barium niobate film is deposited directly on the substrate. These capacitors exhibit a low temperature coefficient of capacitance and a high capacitance density.
Inventors:
ABUNAA SHIYAUROBU
UORUTAA KAARU TSUBUITSUKAA
MAIRON FUROMAA
SUTANREI RUKASHIKI
UORUTAA KAARU TSUBUITSUKAA
MAIRON FUROMAA
SUTANREI RUKASHIKI
Application Number:
JP30403386A
Publication Date:
July 14, 1987
Filing Date:
December 22, 1986
Export Citation:
Assignee:
PHILIPS NV
International Classes:
H01G4/18; H01G4/008; H01G4/12; H01L21/02; (IPC1-7): H01G4/18
Attorney, Agent or Firm:
Akihide Sugimura