Title:
薄膜デバイス
Document Type and Number:
Japanese Patent JP6766607
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a technique which makes it possible to obtain a desired capacity change property in a thin film device arranged so that a DC bias voltage is applied to a thin film capacitor element formed of ceramic to utilize the capacity change property.SOLUTION: A thin film device 100 comprises: a high-frequency signal line SL; a thin film capacitor element C inserted into the high-frequency signal line SL; a bias voltage-applying line BL which applies a DC bias voltage to the thin film capacitor element C; and thin film resistance elements R1, R2 being arranged in the bias voltage-applying line BL, and connected in series with the thin film capacitor element C. The thin film capacitor element C has a ceramic dielectric layer 6 having a negative resistance temperature coefficient, and has an insulation resistance value of 50 MΩ or less. A material forming the thin film resistance elements R1, R2 has an electrical resistivity of 10000 μΩ cm or larger, and a resistance temperature coefficient smaller than an absolute value of the resistance temperature coefficient of the dielectric layer 6.SELECTED DRAWING: Figure 2
Inventors:
Satoshi Shindo
Tomoyuki Ashimine
Hiroshi Takeshima
Tomoyuki Ashimine
Hiroshi Takeshima
Application Number:
JP2016220929A
Publication Date:
October 14, 2020
Filing Date:
November 11, 2016
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
H01G4/33; H01C7/00; H01C13/00; H01G7/06; H01G17/00
Domestic Patent References:
| JP2002141201A | ||||
| JP2197108A | ||||
| JP2005064437A |
Foreign References:
| WO2016027692A1 |
Attorney, Agent or Firm:
Ryose Uji
Kakusho Shoichi
Maruyama Yosuke
Kakusho Shoichi
Maruyama Yosuke