Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
THIN FILM EL ELEMENT
Document Type and Number:
Japanese Patent JPS6454692
Kind Code:
A
Abstract:

PURPOSE: To restrict transformation of Sn at low temperatures and prevent the function as a back plate from deteriorating by forming the back plate with Sn containing a small amount of time-constant additive.

CONSTITUTION: An EL panel is obtained by forming layers with electron beam deposition or the like on a transparent glass substrate 1 with said layers comprising: a transparent electrode 3 made of ITO, an insulation layer 4 made of Al2O3 and Ta2O5, a luminescent layer 5 made of ZnS doped with Mn, an insulation layer 6 made of Y2O3 and Ta2O5, and a back plate 7 made of Sn added with a small amount of additive. The back plate 7 is constituted with Sn containing at least one element out of Bi, Sb, Pb, Au, Cd, Ag, As, and In by a small amount. As a result, the electrode 7 is prevented from deteriorating due to transformation even if dielectric breakdown occurs between the electrodes 3 and 7 as the electrode comes to a self-restoring type breakdown mode without expanding a breakdown point.


Inventors:
WASHIMI HIROSHI
Application Number:
JP21241187A
Publication Date:
March 02, 1989
Filing Date:
August 25, 1987
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
KANSAI NIPPON ELECTRIC
International Classes:
G09F9/30; H05B33/12; H05B33/26; (IPC1-7): G09F9/30; H05B33/26