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Patent Searching and Data


Title:
THIN FILM AND FORMATION THEREOF
Document Type and Number:
Japanese Patent JPH1053873
Kind Code:
A
Abstract:

To economically obtain thin film having gas barriering properties, translucency and retorting properties and furthermore imparted with ultraviolet resistance by incorporating metals other than silicon into SiOX thin film.

This is SiOX thin film contg. metals other than silicon, preferably, contg. colored metals such as Fe, Ni, Cu, Co, Cr or the like and having translucency and coloring, in which its film thickness can be regulated to the optional one of ≤10μm, particularly, in the range of 100 to 10μm. In is preferably that, in the SiOX thin film, Si-contg. organic matter such as dimethoxy (methyl) silane and organic matter contg. metals other than silicon such as ferrocene as an Fe source arre used as raw materials, and film formation is executed by a CVD process, preferably, by an ECR plasma CVD process.


Inventors:
ENDO KATSUMI
KITAORI NORIYUKI
SASAKI KATSUMI
YOSHIDA OSAMU
MIZUNOYA HIROHIDE
Application Number:
JP20841596A
Publication Date:
February 24, 1998
Filing Date:
August 07, 1996
Export Citation:
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Assignee:
KAO CORP
International Classes:
C23C16/42; C23C16/50; C23C16/511; (IPC1-7): C23C16/42; C23C16/50
Attorney, Agent or Firm:
Kaoru Furuya (3 outside)