PURPOSE: To crack and deposit only the gaseous org. metals free from impurities on a substrate by controlling the operations of a substrate heater and a gas temp. cooler according to the results of monitoring of a substrate temp. and atmosphere temp.
CONSTITUTION: The temp. of the substrate 9 is raised by the substrate heater (susceptor with a heater) 10. The output signal of a quadrupole weight analyzer 16 is detected by a monitor device 17 and a reaction controller (CVD controller 7 controls the atmosphere temp. and substrate temp. to the environment where the impurities are not generated. The pressure in a reaction chamber 2 is controlled by a pressure regulator 6 and further the gas supply rate into the reaction chamber 2 is controlled by a mass flow controller 5. The reaction controller 7 controls the atmosphere temp. right above the substrate 9 by the gas temp. cooler 15 in accordance with the detection output of a temp. measuring element 13 to avert the generation of the impurities. The thin film having high quality is formed with high adhesive power in this way.
ONISHI HIROSHI
KOBAYASHI MINORU
