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Patent Searching and Data


Title:
THIN FILM-FORMING METHOD MANUFACTURE OF SEMICONDUCTOR DEVICE AND THIN FILM-FORMING DEVICE
Document Type and Number:
Japanese Patent JPH09213634
Kind Code:
A
Abstract:

To enable a thin film material source smaller than a base substance to be applicable thereby making a small chamber capacity serve the purpose by relatively shifting the special position of thin film material particle flow and the base substance, while irradiating a partial region of the base substance with the thin film material particles.

A thin film forming device 10 is provided with a gas leading part 12 for introducing gas into a chamber 11, a gas exhaust part 13 for exhausting gas from the chamber 11 and a cathode 14. The thin film forming device 10 arranged between a target 15 corresponding to a thin film material source and a supporting base 19 is also provided with a shield board 17 for ejecting the thin film material particles to a partial region of a base substance. In such a constitution, a rotary axle 19A extends from the lower part of the supporting base 19 to be engaged with a turning means made of a motor and a gear thereby turning the supporting base 19. Here, the rotary axle 19A and the turning means fill the role the role of a shifting means for relatively shifting the thin film material source and the base substance.


Inventors:
YAMADA HIROSHI
Application Number:
JP4044096A
Publication Date:
August 15, 1997
Filing Date:
February 02, 1996
Export Citation:
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Assignee:
SONY CORP
International Classes:
C30B29/38; C23C14/50; H01L21/203; (IPC1-7): H01L21/203; C23C14/50; C30B29/38
Attorney, Agent or Firm:
Takahisa Yamamoto