Title:
THIN FILM OF LITHIUM NIOBATE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH0437698
Kind Code:
A
Abstract:
PURPOSE:To produce the title thin film having superior optical characteristics by the use of an easily available substrate by forming a thin film of a lithium niobate single crystal on a substrate of a lithium niobate single crystal with a thin film of a single crystal as a middle layer in-between. CONSTITUTION:A thin film of a single crystal such as a lithium tantalate single crystal as a middle layer is formed on a substrate of a lithium niobate single crystal preferably in 0.2-30mum thickness by liq. phase epitaxial growth or other method. A thin film of a lithium niobate single crystal is then formed on the middle layer so that the lattice of the thin film is preferably matched to that of the middle layer. The substrate is commercially available, has high resistance to mechanical and thermal shocks and is not damaged during film formation. The resulting thin film of a lithium niobate single crystal is suitable for use as a material forming a thin film waveguide type second harmonic generating element.
Inventors:
ENOMOTO AKIRA
Application Number:
JP14179890A
Publication Date:
February 07, 1992
Filing Date:
May 30, 1990
Export Citation:
Assignee:
IBIDEN CO LTD
International Classes:
G02B1/02; C30B19/00; C30B29/30; (IPC1-7): C30B19/00; C30B29/30; G02B1/02
Next Patent: PRODUCTION OF GALLIUM ARSENIDE SINGLE CRYSTAL