Title:
THIN FILM MANUFACTURING METHOD AND THIN FILM MANUFACTURING APPARATUS
Document Type and Number:
Japanese Patent JP2005240091
Kind Code:
A
Abstract:
To provide a thin film manufacturing method for easily optimizing the film deposition condition.
Cl2 gas which is halogen gas is applied to a member 8 to be etched while the member 8 formed of Cu and capable of generating high vapor pressure halide is heated by a heater 11 and maintained at a high temperature, and gas of a precursor (CuCl) 15 which is a halogen compound is formed. The precursor 15 is adsorbed on a substrate 3 by maintaining the temperature of the substrate 3 at a relatively low temperature, Cl* which is the free radical of halogen is applied to the precursor 15 and Cl is abstracted to deposit a Cu thin film 16 on the substrate 3 to perform the film deposition.
Inventors:
SAKAMOTO HITOSHI
NODA MASARU
NODA MASARU
Application Number:
JP2004050950A
Publication Date:
September 08, 2005
Filing Date:
February 26, 2004
Export Citation:
Assignee:
MITSUBISHI HEAVY IND LTD
NODA MASARU
NODA MASARU
International Classes:
C23C16/08; C23C16/448; H01L21/285; (IPC1-7): C23C16/08; C23C16/448; H01L21/285
Attorney, Agent or Firm:
Toshiro Mitsuishi
Tadahiro Mitsuishi
Yasuyuki Tanaka
Hiroshi Matsumoto
Tadahiro Mitsuishi
Yasuyuki Tanaka
Hiroshi Matsumoto