Title:
THIN FILM MATERIAL AND THIN FILM FORMATION
Document Type and Number:
Japanese Patent JP3782608
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a thin film forming method capable of producing a gradient film using a target other than a dielectric target and without using plural target materials, capable of easily changing the refractive index without requiring a large scale device by controlling the flow rate ratio of the gas species to be introduced to change the compositional ratio of nitrogen, oxygen and fluorine and capable of producing an optically suitable thin film without reducing the density of the film, and to propose a thin film material by the forming method.
SOLUTION: In this thin film forming method employing a sputtering device, a metallic target 109 is used. At least two or more kinds of a gaseous nitride, gaseous oxide and gaseous fluoride are introduced into a vacuum vessel 1 at the time of film formation, and the flow rate radio of each gas is continuously or stepwise controlled and changed, by which the refractive index of the compd. film is continuously or stepwise controlled.
Inventors:
Kanazawa Hidehiro
Kenji Ando
Otani Minoru
Yasuyuki Suzuki
Ryuji Maki
Kenji Ando
Otani Minoru
Yasuyuki Suzuki
Ryuji Maki
Application Number:
JP11817299A
Publication Date:
June 07, 2006
Filing Date:
April 26, 1999
Export Citation:
Assignee:
Canon Inc
International Classes:
C23C14/34; C23C14/00; C23C14/35; G02B1/10; G02B1/115; (IPC1-7): C23C14/34; G02B1/10
Domestic Patent References:
| JP60208813A | ||||
| JP8201601A | ||||
| JP7166344A | ||||
| JP5065649A |
Foreign References:
| US3962062 | ||||
| US3607697 |
Attorney, Agent or Firm:
Akio Miyazaki
Shinichi Iwata
Masaaki Ogata
Nobuyuki Kaneda
Ishibashi Masayuki
Katsuhiro Ito
Shinichi Iwata
Masaaki Ogata
Nobuyuki Kaneda
Ishibashi Masayuki
Katsuhiro Ito