THIN-FILM PIEZOELECTRIC ELEMENT

Title:

THIN-FILM PIEZOELECTRIC ELEMENT

Document Type and Number:

Japanese Patent JPH09260735

Kind Code:

A

Abstract:

To prevent the decrease in the piezoelectric characteristics due to the heat treatment after an electrode is formed and to obtain excellent sensor sensitivity by forming the electrode on a zinc oxide thin film of TiW or TiN.

A silicon oxide film 2 is formed on a silicon substrate 1 by thermal oxidation. A piezoelectric sensor 3, made of a zinc oxide thin film extended to the film 2 of the peripheral edge of a window 2A, is formed to cover the substrate 1 in the window 2A. Then, after a TiW or TiN layer 4 is formed by a sputtering method, it is patterned to integrally form the electrode on the sensor 3 with the wiring on the film 2 of TiW or TiN layer 4. After the electrode is formed, it is heat treated in the atmosphere. Then, the rear surface of the board 1 of the region formed with the sensor 3 is etched with alkali to form a diaphragm 2a. Eventually, the shape of a vibrator is formed by dry etching.

Inventors:

ASAUMI KAZUSHI
MATSUHIRO YASUSHI
ITO TAKASHI
YORINAGA MUNEO
YOSHINO YOSHI
MIURA KAZUHIKO

Application Number:

JP7055896A

Publication Date:

October 03, 1997

Filing Date:

March 26, 1996

Export Citation:

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Assignee:

NIPPON SOKEN
DENSO CORP

International Classes:

G01P15/09; H01L21/28; H01L29/84; H01L41/08; (IPC1-7): H01L41/08; G01P15/09; H01L21/28; H01L29/84

Attorney, Agent or Firm:

Takashi Ishida (2 outside)

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