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Title:
THIN FILM SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS60195979
Kind Code:
A
Abstract:
PURPOSE:To readily manufacture a high efficiency and flexible solar battery by using specific polyether sulfone film as a substrate, thereby eliminating solvent or water content in a temperature region for forming a non-single crystal semiconductor layer. CONSTITUTION:A photovoltaic generation layer made of non-signal crystal semiconductor is formed on a polyether sulfone film which has a constitution unit represented by the formula and a thickness of the film is 80% or more of the permeability of a visible light range of 50-500mum. A structure which has a substrate 10, a transparent electrode 11, a non-single crystal semiconductor 12, and an upper electrode 13 are laminated in this sequence is formed, and a light is incident from a substrate side. One side surface of the film of the substrate 10 is formed with an irregular state, and the boundary with the semiconductor layer can be formed readily with irregular state merely by normally laminating the layer 11, thereby effectively utilizing the light.

Inventors:
YAMAZAKI SHIYUNPEI
KOYANAGI KAORU
HAMAYA TOSHIJI
Application Number:
JP5179984A
Publication Date:
October 04, 1985
Filing Date:
March 17, 1984
Export Citation:
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Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L51/42; H01L31/0392; (IPC1-7): H01L31/04
Domestic Patent References:
JPS59189683A1984-10-27
JPS60194582A1985-10-03



 
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