To obtain a TFT having high performance equal to that of a TFT manufactured by utilizing a laser annealing method, in manufacturing a flexible-substrate TFT by utilizing a solid phase crystallization method.
The manufacturing of a flexible-substrate TFT has a process 302 for feeding a metal-thin-film substrate having a flat surface, a process 304 for subjecting the surface of the substrate to planarization processing, a process 306 for laminating an insulation layer on the planarized surface of the metal-thin-film substrate, a process 308 for laminating an amorphous silicon layer on the insulation layer, a process 310 for annealing the amorphous silicon layer by a solid-phase crystallization method to form a polycrystal silicon layer, a process 312 for thermally growing a gate insulation film on the polycrystal silicon layer, and a process 314 for forming the gate region, the source region, and the drain region of a transistor.
VOUTSAS APOSTOLOS T
HARTZELL JOHN W
Hiroshi Koyama
Yuji Takeuchi
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