THIN-FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY PANEL, MANUFACTURING METHOD OF THE THIN-FILM TRANSISTOR

Title:

THIN-FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY PANEL, MANUFACTURING METHOD OF THE THIN-FILM TRANSISTOR

Document Type and Number:

Japanese Patent JP2001051293

Kind Code:

A

Abstract:

To reduce the number of necessary processes in the manufacturing processes of thin-film transistors, and also to prevent an abnormal potential from occurring by the cause of current leaking from data lines.

This transistor is mounted on a prescribed substrate and is also provide with a gate electrode 30 formed in a prescribed pattern, a semiconductor layer formed corresponding to the patterning of the gate electrode 30, a pixel electrode 25 formed via this semiconductor layer, and a signal electrode formed via the semiconductor layer and also arranged with a prescribed gap from the pixel electrode 25. Then, this signal electrode is arranged at such a position that crosstalk current is prevented from flowing into the pixel electrode 25 from adjacent signal lines 32b, 32c via the semiconductor layer.

Inventors:

TSUJIMURA TAKATOSHI
MIYAMOTO TAKASHI
TOKUHIRO OSAMU
MOROOKA MITSUO

Application Number:

JP21460399A

Publication Date:

February 23, 2001

Filing Date:

July 29, 1999

Export Citation:

Click for automatic bibliography generation Help

Assignee:

IBM

International Classes:

G09F9/30; G02F1/133; G02F1/136; G02F1/1362; G02F1/1365; G02F1/1368; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): G02F1/1365; G09F9/30; H01L21/336; H01L29/786

Attorney, Agent or Firm:

Hiroshi Sakaguchi (1 person outside)

Previous Patent: OPTOELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF

Next Patent: HIGH DEFINITION TFT LIQUID CRYSTAL DISPLAY DEVICE