Title:
THIN-FILM TRANSISTOR, MANUFACTURE OF THE SAME, AND DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP3833327
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an active matrix display device capable of preventing lower yield and generation of defective display.
SOLUTION: A surface of polycrystalline silicon film 11 becoming an active layer of a TFT(thin-film transistor) 106 is flat, and its thickness corresponding to a drain region 82 and a source region 83 is thicker than the thickness corresponding to a channel region 93. The grain size in every part of the polycrystalline silicon film 11 is nearly uniform and this makes an element characteristic of the TFT106 uniform. This also optimizes a sheet resistance of each region, 82a and 83a, and makes an ON-current of the TFT106 uniform. This resultingly prevents lower yield and generation of defective display.
Inventors:
Satoshi Ishida
Ken Wakita
Hiroyuki Kuriyama
Aoki Katsuhito
Ken Wakita
Hiroyuki Kuriyama
Aoki Katsuhito
Application Number:
JP2049797A
Publication Date:
October 11, 2006
Filing Date:
February 03, 1997
Export Citation:
Assignee:
三洋電機株式会社
ソニー株式会社
ソニー株式会社
International Classes:
G02F1/1343; H01L29/786; G02F1/136; G02F1/1368; G09F9/33; H01L21/336; (IPC1-7): H01L29/786; H01L21/336; G02F1/1343; G02F1/136; G09F9/33
Domestic Patent References:
| JP6188266A | ||||
| JP6302614A | ||||
| JP4299569A | ||||
| JP6077488A | ||||
| JP6097196A |
Attorney, Agent or Firm:
Hironobu Onda
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