Title:
THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP3211291
Kind Code:
B2
Abstract:
PURPOSE: To cut down the power consumption in the title thin film transistor provided with a back gate electrode.
CONSTITUTION: One conductivity type semiconductor thin film 14 is provided with a source region 16 and a drain region 17 wherein the same one conductivity type impurities are diffused in high concentration and a gate electrode 19 is provided on the upper surface of channel region 15 through the intermediary of a gate insulating film 8 while a back gate electrode 12 is provided on the lower surface of channel region 15 through the intermediary of a ferroelectric film 13. On the other hand, when the elements between the gate electrode 19 and the back electrode 12 are impressed with a voltage in the specific direction in the case of p channel, the ferroelectric film 13 is polarized to turn the opposite surface side thereof to the semiconductor thin film 14 into + furthermore this polarization is to be sustained even if the voltage impression is stopped so that the back gate 12 may be affected as if it is constantly impressed with + voltage when the ferroelectric film 13 is once polarized to turn the opposite surface side thereof to the semiconductor thin film 14 into +. Accordingly, the power sonsumption can be cut down.
Inventors:
Hidetsugu Kojima
Application Number:
JP30121691A
Publication Date:
September 25, 2001
Filing Date:
October 22, 1991
Export Citation:
Assignee:
CASIO COMPUTER CO.,LTD.
International Classes:
H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L29/786
Domestic Patent References:
| JP2260461A | ||||
| JP584974A | ||||
| JP63115361A | ||||
| JP625661A |
Attorney, Agent or Firm:
Hanawa Yoshio