Title:
THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPH01170047
Kind Code:
A
Abstract:
PURPOSE:To make it possible to obtain stable and superior contact characteristics by a method wherein the reduced metal part of a transparent electrode is provided at the contact interface between the transparent electrode and a metal for wiring. CONSTITUTION:A transparent electrode at the contact part between the transparent electrode 8 and a metal 7 for wiring is reduced with hydrogen to form the contact part into a contact structure, wherein indium 9 not containing oxygen is interposed between the electrode 8 and the metal 7. As a reduction method, there is a method wherein after the transparent electrode is formed using a hydrogencontaining SiN film as an insulating film for forming a thin film transistor, this substrate is annealed at a temperature at which hydrogen is removed. Among methods to implant hydrogen to expose during plasma hydrogen discharge are a method to implant by an ion implantation method, for example, and the like. Thereby, oxygen at the contact part is reduced, such an oxide film as an Al2O3 film is removed and good contact characteristics are obtained.
Inventors:
ONO KIKUO
MIMURA AKIO
KONISHI NOBUTAKE
MIMURA AKIO
KONISHI NOBUTAKE
Application Number:
JP32706787A
Publication Date:
July 05, 1989
Filing Date:
December 25, 1987
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L27/12; H01L29/78
Attorney, Agent or Firm:
Katsuo Ogawa (2 outside)