PURPOSE: To enhance the crystallizability of a doped polycrystalline silicon film used for compensation of ohmic contact by depositing a non-doped polycrystalline silicon film which forms a channel layer over source and drain electrodes with the interposal of the doped polycrystalline silicon film and by extending a part of the doped polycrystalline silicon film over another non- doped polycrystalline silicon film.
CONSTITUTION: Non-doped polycrystalline silicon films 12, 13 are deposited on regions to form a source electrode 2 and a drain electrode 3 in a substrate 1, so that these non-doped polycrystalline silicon films 12, 13 may be larger inward of the regions to form the source electrode 2 and the drain electrode 3 and extend toward the channel region. Next, the source electrode 2 and the drain electrode 3 are formed on these non-doped polycrystalline silicon films 12, 13. Then, N+ type polycrystalline silicon films 4, 5 are grown on the source electrode 2 and the drain electrode 3 and on the non-doped polycrystalline silicon films 12, 13 extending inward of and exposed from the source electrode 2 and the drain electrode 3.
NAGAHARA TATSURO
FUJIMOTO KENJI
KASHIWAGI YUSAKU
