PURPOSE: To eliminate damage of a gate electrode and to prevent short-circuits of the gate electrode and a source electrode, a drain electrode by forming a semiconductor layer on the gate electrode and inserting an aluminum oxide layer between the semiconductor layer and the gate electrode.
CONSTITUTION: A tantalum film g11 is provided on a lower transparent glass substrate SUB1, and an aluminum film g12 is provided on the film g11. A gate electrode GT and an electrode PL1 of a holding capacity element are formed of the films g11, g12, an aluminum anodized film AOL is provided on the film g12, and provided at an intersection between the electrode GT, a video signal of a scanning signal line and an electrode PL1. In such a configuration, since the adhesive properties of the film g11 to the substrate SUB1 are better than that of aluminum, etc., damage, peeling of the electrode GT can be prevented, and reliability, yield are improved. Since the dielectric breakdown strength of the film AOL is higher than that of Ta2O3, etc., a short-circuit of the electrode GT to the source electrode DS1 and the drain electrode SD2 can be prevented, and a leakage current between then can be reduced.
SHIROHASHI KAZUO
MATSUKAWA YUKA
MATSUMARU HARUO
SASANO AKIRA
