Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3204012
Kind Code:
B2
Abstract:
PURPOSE: To provide a method of manufacturing a semiconductor device, which has an ashing process of making a high ashing speed and the reliable removal of a reaction product possible.
CONSTITUTION: An Al wiring 13 with a TiN film or a TiON film formed as an antireflection film on its surface is patterned on a silicon substrate 11 covered with an insulating film 12 by dry etching using a resist 14 as a mask. In a resist ashing process, a first step plasma treatment using the mixed gas of CHF3 gas and O2 gas is performed in a state that the substrate 11 is heated, subsequently a second step plasma treatment using the mixed gas of CH3OH gas and CHF3 gas is performed and furthermore, a third step plasma treatment using the mixed gas of CHF3 gas and O2 gas is performed and lastly, the substrate is cleaned with an amine solvent.
Inventors:
Masahiro Hirakata
Application Number:
JP33439794A
Publication Date:
September 04, 2001
Filing Date:
December 19, 1994
Export Citation:
Assignee:
Yamaha Corporation
International Classes:
H01L21/302; H01L21/027; H01L21/28; H01L21/3065; H01L21/3205; H01L21/3213; H01L23/52; (IPC1-7): H01L21/3065; H01L21/027; H01L21/3205
Domestic Patent References:
| JP5226299A | ||||
| JP5267157A | ||||
| JP605526A |
Attorney, Agent or Firm:
Itami Masaru