Title:
Ti, Ta, Hf, Zr AND RELATED METAL SILICON AMIDE FOR ALD/CVD OF METAL-SILICON NITRIDE, OXIDE OR OXYNITRIDE
Document Type and Number:
Japanese Patent JP2010222362
Kind Code:
A
Abstract:
To provide precursors suitable for forming metal silicon nitride base film, or metal silicon oxide or metal silicon oxynitride base film.
Organometallic complexes represented by the structure of the figure are provided. Wherein, M is a metal selected from the group 4 of the element periodic table. CVD and ALD deposition processes use the complex.
Inventors:
NORMAN JOHN A T
LEI XINJIAN
LEI XINJIAN
Application Number:
JP2010118497A
Publication Date:
October 07, 2010
Filing Date:
May 24, 2010
Export Citation:
Assignee:
AIR PROD & CHEM
International Classes:
C07F7/02; C23C16/42; C07F7/21; C07F7/28
Domestic Patent References:
| JPH09104984A | 1997-04-22 |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Yoshihiro Kobayashi
Atsushi Ebiya
Hiroyuki Onoda
Takashi Ishida
Tetsuji Koga
Yoshihiro Kobayashi
Atsushi Ebiya
Hiroyuki Onoda
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