スパッタリング用チタンターゲット - ＪＸ日鉱日石金属株式会社

Title:

スパッタリング用チタンターゲット

Document Type and Number:

Japanese Patent JP5689527

Kind Code:

B2

Abstract:

A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.

Inventors:

塚本志郎
牧野修仁
福嶋篤志
八木和人
日野英治

Application Number:

JP2013506020A

Publication Date:

March 25, 2015

Filing Date:

April 27, 2012

Export Citation:

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