LIQUID PHASE EPITAXIAL GROWTH

Japanese Patent JPS6025228

A

PURPOSE:To enable to grow an epitaxial crystal having no misfit displacement and having a broad area with favorable reproducibility by a method wherein a groove type recess part is provided previously at the side inner than the side edge part of the surface region of a substrate to come in contact with a solution for growth. CONSTITUTION:A squarely loop-shape groove type recess part 6 of about 500mum width, about 50mum depth and 16X16mm. outside size, for example, is formed on the surface of a substrate 1 according to photolithography and chemical etching. It is necessary to form outside size of the groove type recess part 6 a little smaller than a contact area with a solution for performance of epitaxial growth of the substrate 1. An N type InP buffer layer is grown at about 5mum thickness, an N type InGaAsP layer of photoluminescence wavelength (lambdapL)=1.34mum is at about 3mum thickness (lattice mismatch DELTAa/aapprox.=0.1%), and moreover an N type InP layer is grown at about 3.5mum thickness in order on the substrate 1 mentioned above, for example. Accordingly, misfit dislocation can be observed only at a narrow region up to the groove type recess part 6 from the peripheral part of the substrate 1, and misfit displacement can be observed scarcely at the growth layer 5 of a region surrounded with the groove type recess part 6.

YAMAGUCHI AKIO

JP13373283A

February 08, 1985

July 22, 1983

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FUJITSU LTD

H01L21/208; H01L33/16; H01L33/30; H01S5/00; (IPC1-7): H01L33/00; H01S3/18

Koshiro Matsuoka

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