PURPOSE: To enable formation of various electrical circuits, photodetectors, etc. by using a silicon base plate having a coefft. of thermal expansion slightly larger than that of a glass film and good joinability and making use of the semiconductor characteristic that said plate possesses in forming said circuits, detectors, etc.
CONSTITUTION: A wafer having 0.5mm thickness and 3 inch diameter is used for an Si base plate 1. SiCl4, GeCl4, BCl4 or PCl4 which is the raw material for forming glass is made together with gaseous He into fine particular glass by an oxyhydrogen burner and such glass is blown to one surface 1a to deposit a porous glass film 2 thereon. The film 2 consists of the three layers; a buffer layer 2a, a core layer 2b and a protective layer 2c. The plate 1 on which the film 2 is deposited is heated up to 1,300°C in a mixed gaseous atmosphere composed of 10:1 gaseous He and O2 in an electric furnace, by which an optical waveguiding film consisting of a buffer layer 3a (5μm thickness), core layer 3b (50μm thickness and protective layer 3c (10μm thickness) is obtd. The difference in the specific refractive index between the core layer and the buffer layer in this case is 1.1%.
YASU MITSUHO
YAMADA YASUBUMI
KOBAYASHI MORIO
| JPS57176005A | 1982-10-29 | |||
| JPS5784189A | 1982-05-26 | |||
| JPS58105111A | 1983-06-22 |