Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0645326
Kind Code:
A
Abstract:
PURPOSE: To realize etchback of a two-stage metallic layer composed of a titanium nitride film to be used as a base adhesive layer and a tungsten film to be formed by Chemical Vapor Deposition(CVD) method.
CONSTITUTION: As a first-stage etching, high-speed etching is applied to a tungsten film 5 with the use of fluorine gas, and the W film 5 is made to remain with the film thickness ranging from 50μm to 100μm. As a second-stage etching, etching is applied to the W film 5 which remains at the first stage by gas mixed with chlorine and oxygen. As a third-stage etching, etching is applied to a Tin film 4 by gas mixed with chlorine-containing gas and fluorine- containing gas, nitrogen, or inert gas.
Inventors:
AKIMOTO KENJI
Application Number:
JP5028293A
Publication Date:
February 18, 1994
Filing Date:
March 11, 1993
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/285; H01L21/28; H01L21/302; H01L21/3065; H01L21/318; H01L21/3205; H01L21/3213; H01L23/52; (IPC1-7): H01L21/3205; H01L21/285; H01L21/302; H01L21/318
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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