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Title:
PLASMA APPARATUS
Document Type and Number:
Japanese Patent JPH0653171
Kind Code:
A
Abstract:

PURPOSE: To efficiently remove sulfuric products from an exhaust pipe of the high vacuum exhaust system in an etcher which conducts dry etching accompanied by deposition of sulfuric products.

CONSTITUTION: In the high vacuum exhaust system of a magnetic field microwave plasma etcher 1, at least a part of an exhaust pipe 6 which connects a turbomolecular pump 5 and a rough drawing pump 7 is provided with a heating mechanism H or a cooling mechanism C. The heating mechanism consists of heating means such as a heater and a thermostat, and this part is heated up to a temperature higher than the sublimation temperature or the decomposition temperature of a sulfuric product to prevent its deposition. The sulfuric product is finally trapped by a desulfuration mechanism 9. In the case of providing the cooling mechanism C, the exhaust pipe 6 is made attachable and detachable, and a refrigerant jacket is provided by surrounding it, where sulfuric products are deposited. Cleaning is conducted by removing the exhaust pipe 6.


Inventors:
NAGAYAMA TETSUJI
Application Number:
JP20138492A
Publication Date:
February 25, 1994
Filing Date:
July 28, 1992
Export Citation:
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Assignee:
SONY CORP
International Classes:
C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): H01L21/302; C23F4/00
Attorney, Agent or Firm:
Akira Koike (2 outside)



 
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