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Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE
Document Type and Number:
Japanese Patent JPH0715033
Kind Code:
A
Abstract:

PURPOSE: To improve output and response speed and obtain a device suitable to a light source for optical communication, by decreasing the density of a current injected in a light emitting region, improving the linearity of current- optical output characteristics up to a high output region, increasing the maximum value of available luminous intensity, and improving the upper limit of signal transmission speed.

CONSTITUTION: An LED 100 has the structure wherein the central part of the main surface of a semiconductor substrate 10 is uneven, a semiconductor multilayered film 20 containing a light emitting layer 22 and an insulating film 30 are laminated in order along the uneven form, and an ohmic electrode 40 is formed in an aperture 30a of the insulating film 30. An ohmic electrode 50, and an aperture 50a for leading out light are formed on the rear of the semiconductor substrate 10. The light emitting layer 22 is constituted as a multiple quantum well structure formed by laminating a plurality of well layers.


Inventors:
MOMOI HAJIME
NODA AKIRA
Application Number:
JP15759293A
Publication Date:
January 17, 1995
Filing Date:
June 28, 1993
Export Citation:
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Assignee:
JAPAN ENERGY CORP
International Classes:
H01L33/06; H01L33/22; H01L33/24; H01L33/30; H01L33/38; H01L33/40; H01L33/44; H01L33/58; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Hiroshi Arafune (1 person outside)