PURPOSE: To provide the photo resist film removing method, which has high ability for removing photo resist and which has the excellent safety and handling property such as workability, by irradiating the photo resist with the ultraviolet rays in the inorganic solution so as to chemically decompose the photo resist film for removing.
CONSTITUTION: A photo resist film is irradiated with the ultraviolet rays in the inorganic solution so as to chemically decompose the photo resist film for removing. This inorganic solution is the solution of peroxy 1 sulfuric acid compound, and the desirable concentration thereof is 0.04-0.4mol/l. This peroxy 1 sulfuric acid compound expressed with KHSO5 or 2KHSO5.KHSO4.K2SO4 is desirable. This inorganic solution desirably contains sulfuric acid at 4.5-36wt% and hydrogen peroxide at 0.05-0.8wt%. Furthermore, hydrochloric acid at 0.2mol/l or less is desirably added to this inorganic solution. This method is appropriately applied to the photo resist made of novolack resin.
SEKIYA AKANE
IWASAKI CHISATO
KASAMA YASUHIKO
OMI TADAHIRO
OMI TADAHIRO
| JPS61223838A | 1986-10-04 | |||
| JPS62226153A | 1987-10-05 |