Title:
【発明の名称】電荷転送装置
Document Type and Number:
Japanese Patent JP2589694
Kind Code:
B2
Abstract:
PURPOSE:To realize a device excellent in S/N ratio by a method wherein a second diffusion layer of a second opposite conductivity type is provided so as to be brought into contact with a first impurity diffusion layer and the variation of a depletion layer around the junction of these diffusion layers is utilized. CONSTITUTION:A first impurity layer 3 transferring signal charges and a second impurity layer 4 which has a conductivity type opposite to that of the impurity layer 3 and is in contact with it are provided to output by utilizing the variation of a depletion layer of a second impurity layer 4. Therefore, the potential of a floating diffusion layer can be detected without using a MOS.FET of a superficial type and moreover instability of the potential which occurs after the rest of the floating diffusion layer can be prevented. By these processes, noises can be remarkably reduced.
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Inventors:
KUMAGAI SAYURI
KURODA TAKAO
KURODA TAKAO
Application Number:
JP14760187A
Publication Date:
March 12, 1997
Filing Date:
June 12, 1987
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L21/339; H01L27/14; H01L27/148; H01L29/76; H01L29/762; H04N5/335; H04N5/341; H04N5/357; H04N5/363; H04N5/372; H04N5/374; (IPC1-7): H01L29/762; H01L21/339
Domestic Patent References:
| JP60195971A |
Attorney, Agent or Firm:
Tomoyuki Takimoto