WIRING STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Title:

WIRING STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Document Type and Number:

Japanese Patent JPH0758203

Kind Code:

A

Abstract:

PURPOSE: To obtain high reliability without nitriding the surface of an aluminum lower wiring layer on the bottom part of an aperture.

CONSTITUTION: The title wiring structure of a semiconductor device is composed of an aluminum lower wiring layer 12 formed on a board 10, an aperture part 18 formed in the insulating layer 14 located above the aluminum lower wiring layer, and a metal wiring material 20A containing no nitrogen and buried in the aperture part 18. The wiring structure of a semiconductor device is manufactured as follows: an aluminum lower wiring layer 12 is formed on the board 10, an insulating layer 14 is formed on the aluminum lower wiring layer 12, a nitrogen-containing metal compound layer 16 is formed on the insulating layer 14, an aperture 18 is formed in the metal compound layer 16 located above the aluminum lower wiring layer, and the insulating layer 14, and metal wiring material 20A containing no nitrogen is provided in the aperture part 18.

Inventors:

SATA HIROSHI

Application Number:

JP22273593A

Publication Date:

March 03, 1995

Filing Date:

August 17, 1993

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/3205; H01L21/768; H01L23/52; H01L23/522; (IPC1-7): H01L21/768; H01L21/3205

Attorney, Agent or Firm:

Takahisa Yamamoto

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