Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5856412
Kind Code:
A
Abstract:
PURPOSE:To attain a single crystal with large grains by a method wherein an insulating film is formed on a single crystal silicon semiconductor substrate, a polycrystalline silicon film is formed thereon, and then it is laser-annealed, so that the single crystal silicon film thus obtained will not separate from the insulating film. CONSTITUTION:A silicon dioxide insulating film is formed on a single crystal silicon semiconductor substrate 11 using a heat oxidation method. Patterning of the insulating film is performed with the photolithography technique to form plural island-like insulating films 12. A polycrystalline silicon film is formed using a chemical vapor growth method. Patterning of the polycrystalline silicon film is performed with the photolithography technique to form plural island-like polycrystalline silicon films 13 each having a contact portion 13A. After forming a phosphorous silicate glass film or silicon nitride film all over the surface to reduce the extent of ruggedness thereof, a laser beam is irradiated. By annealing it thus structured, a single crystal with large grains can be developed and the obtained single crystal silicon film will not separate from the insulating film 12.
Inventors:
KAWAMURA SEIICHIROU
Application Number:
JP15551481A
Publication Date:
April 04, 1983
Filing Date:
September 30, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L23/52; H01L21/02; H01L21/20; H01L21/263; H01L21/3205; H01L27/12; (IPC1-7): H01L21/263; H01L21/88; H01L27/12
Attorney, Agent or Firm:
Kugoro Tamamushi