Title:
LIGHT EMITTING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5923578
Kind Code:
A
Abstract:
PURPOSE:To increase the efficiency of light emission by epitaxially forming a GaP sequentially in the prescribed density and thickness on an N type GaP substrate of the prescribed density to form an N-N<+>-P-P<+> type. CONSTITUTION:An N type layer 7 of 2-5X10<17>cm<-3> is susperposed in a thickness larger than 60mum on an N type GeP substrate 6 of 3-6X10<17>cm<-3>, thereby reducing the etching pit density and the reabsorbing effect. Then, an N<+> type layer 8 of 0.8-1.5X10<18>cm<-3> is superposed to suppress to a thickness lower than 10mum, thereby preventing the production of absorption and the decrease in the light emitting efficiency, and a P type layer 9 of 0.5-10<17>cm<-3> is superposed, thereby preventing the increase in the series resistance. A P<+> type layer 10 is eventually superposed, thereby forming uniform current distribution on the entire junctions surface, eliminating the decrease and the irregularity in the intensity, the thickness is suppressed to a value lower than 10mum. Thereby preventing the reabsorption of the light, and preventing the decrease in the light emitting effeiciency. The light emitting efficiency of pure green light LED of GaP thus obtained is approx. 0.14% of approx. twice of the conventional one.
Inventors:
KAWABATA TOSHIHARU
FURUIKE SUSUMU
MATSUDA TOSHIO
IWASA HITOO
FURUIKE SUSUMU
MATSUDA TOSHIO
IWASA HITOO
Application Number:
JP13345182A
Publication Date:
February 07, 1984
Filing Date:
July 29, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/208; H01L33/30; (IPC1-7): H01L21/208; H01L33/00
Domestic Patent References:
| JPS52147088A | 1977-12-07 | |||
| JPS4931290A | 1974-03-20 |
Attorney, Agent or Firm:
Akira Kobiji (2 outside)