Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5947770
Kind Code:
A
Abstract:
A semiconductor device includes a semiconductor body in which a field effect transistor is formed which is composed of a number of parallel-connected subtransistors. Each subtransistor comprises a polygonal box-shaped cell of the semiconductor body. These cells each comprise a first semiconductor zone embedded in the semiconductor body and a second semiconductor zone embedded in the first zone. The peripheral part of the semiconductor body surrounding the first zone serves as a drain zone of the subtransistor, while the second zone serves as a source zone and a narrow edge strip of the first zone lying between the second zone and the peripheral part serves as a channel zone. The peripheral part comprises strip-shaped parts which extend in the direction of a central part of the first zone. The transistor has a comparatively low resistance in the switched-on state.
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| WO/1998/026458 | INSULATED GATE SEMICONDUCTOR DEVICE |
| JPS51135377 | METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR |
| WO/2004/112136 | ELECTRONIC DEVICE |
Inventors:
JIERAADO ROBEERU DABIDO
Application Number:
JP14394383A
Publication Date:
March 17, 1984
Filing Date:
August 08, 1983
Export Citation:
Assignee:
PHILIPS NV
International Classes:
H01L29/06; H01L29/10; H01L29/78; (IPC1-7): H01L29/78
Domestic Patent References:
| JPS5578574A | 1980-06-13 | |||
| JPS5726467A | 1982-02-12 |
Attorney, Agent or Firm:
Akihide Sugimura