PURPOSE: To achieve an improvement in the coverability for level difference in a contact hole and a lower resistance and also to provide a semiconductor device with improved electromigration resistance and its manufacture.
CONSTITUTION: Lower layer wiring 5 having a two-layer construction comprising an aluminum layer 4 and an alloy layer 12 made of aluminum and a group IV transition metal is connected to upper layer wiring 10 having two-layer construction comprising an alloy layer 13 made of a group IV transition metal and aluminum and an aluminum layer 9 through a contact hole 11, and an alloy layer 12 made of a group IV transition metal and aluminum, an aluminum layer 7, and an alloy layer 13 made of a group IV transition metal and aluminum are embedded in the order of the layers explained above from the lower layer wiring side.