Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS599937
Kind Code:
A
Abstract:
PURPOSE:To form a stable inclination to a contact hole by applying an applying liquid for forming an SiO2 group coating, thermally treating the whole at a proper temperature, and obtaining an etching rate faster than an insulating film as a foundation. CONSTITUTION:The applying liquid (a silica film) 26 for forming the SiO2 group coating is applied to a sample, in which the photography of gate poly Si and the formation of source-drain are completed and to which a phosphorus glass film 25 is formed. The whole is thermally treated at a proper temperature. The etching rate of the film 26 through heat treatment in this manner is made faster than that of the film 25. When the contact hole is bored by a photo- resist and the surface is etched, a stable taper can be formed to the film 25 because the etching rate of the film 26 is faster. Accordingly, a disconnection in the contact section of an Al wiring can be prevented.
Inventors:
OKUYAMA YASUSHI
Application Number:
JP11797182A
Publication Date:
January 19, 1984
Filing Date:
July 07, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/768; H01L21/314; H01L21/316; (IPC1-7): H01L21/314
Attorney, Agent or Firm:
Uchihara Shin
Next Patent: FILTER CIRCUIT FOR ELECTROMAGNETIC PICKUP