PURPOSE: To prepare a high quality film by reducing the dispersion of film thickness distribution and film composition distribution and decreasing specific resistance, in a forming method of the metal silicide film by magnetron sputtering method.

CONSTITUTION: The erosion zone of a metal silicide target is periodically controlled by allowing current having prescribed frequency to flow between plural magnet coils 15, 16, 17 provided at the rear side of a cathode. At the same time, the output of DC power source 20 for sputtering power source is controlled simultaneously with the current to the magnet coils 15, 16, 17.