Title:
【発明の名称】レーザー処理装置
Document Type and Number:
Japanese Patent JP3375988
Kind Code:
B2
Abstract:
PURPOSE:To achieve diffusion of impurities into a body such as a semiconductor, combination thereof with the material of the body, and penetration thereof into the body physically or chemically with good efficiency by a method wherein, when the object is doped with the impurities, the object is heated to its melting point or lower and a laser beam is applied in a reactive-gas atmosphere which contains the impurities. CONSTITUTION:When a body (a sample) such as a semiconductor, a metal, an insulator or the like is doped with impurities in a low-temperature process, the sample 34 is placed on a sample holder 35 and a chamber 31 is evacuated to produce a vacuum via an evacuation system 37. Before or after this evacuation operation, a heater 36 is energized, and the component of the air which has been absorbed to the inside of the chamber is evacuated. Then, a reaction gas is introduced into the chamber 31 via a gas system 38, and the sample 34 is irradiated with a laser beam 33 through a window 32. Thereby, the sample 34 is doped with the impurities. At this time, electric power is applied across one pair of electrodes 39 as required from high-frequency or AC (or DC) power supplies 40, a plasma is generated inside the chamber 31 and the reactive gas is set to an active state.
Inventors:
Hongyong Zhang
Shunpei Yamazaki
Yasuhiko Takemura
Shunpei Yamazaki
Yasuhiko Takemura
Application Number:
JP23776392A
Publication Date:
February 10, 2003
Filing Date:
August 12, 1992
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/22; B60R25/00; E05B67/06; E05B67/38; H01L21/223; H01L21/268; H01L21/336; H01L29/786; (IPC1-7): H01L21/22; H01L21/268
Domestic Patent References:
| JP1101625A | ||||
| JP54131866A | ||||
| JP5630721A | ||||
| JP57162339A | ||||
| JP2226732A | ||||
| JP2222545A | ||||
| JP2224339A | ||||
| JP6411323A |
Attorney, Agent or Firm:
Kenzo Fukuda (3 others)