Title:
MANUFACTURE OF THIN FILM OF FERROELECTRIC SUBSTANCE
Document Type and Number:
Japanese Patent JPH07111107
Kind Code:
A
Abstract:
PURPOSE: To provide a method of manufacture of a thin film of a ferroelectric substance which has uniform crystal grain sizes and has no phases formed therein that are different from a perovskite phase.
CONSTITUTION: A thin film of crystallites of lead zirconate titanate is formed on a silicon substrate which is held at 350°C to 450°C, and the thin film of crystallites is heat treated at 700°C for about 10 minutes for crystallization. Sputtering is utilized to form the thin film of lead zirconate titanate in a crystallitic state, at which time the temperature of the substrate is 350°C to 450°C.
Inventors:
SHIRAKAWA YUKIHIKO
Application Number:
JP28003393A
Publication Date:
April 25, 1995
Filing Date:
October 13, 1993
Export Citation:
Assignee:
TDK CORP
International Classes:
H01L27/10; H01B3/00; H01B3/12; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; (IPC1-7): H01B3/00; H01B3/12; H01L21/8242; H01L27/108
Attorney, Agent or Firm:
Shinichiro Nanjo