PURPOSE: To raise the photoelectric conversion efficiency of a photodetector, without the increase of the area of the P-N junction of the photodetector which is a cause of noise increase, by providing a texture structure on the surface of the photodetector.
CONSTITUTION: Silicon grains 16 are provided on the insulating film or on the reflection preventing film 10 of the photoelectric receiving surface 15 of a photodetector. Silicon grains are formed on the surface of the photodetector by the processes of forming on the photoelectric receiving surface an aluminum (Al-Si) layer containing silicon of more than solid solubility, of aggregating and depositing silicon in the Al-Si layer, and of removing the Al-Si layer by wet etching and leaving the remaining deposit of the silicon grains behind.
YAMAMOTO MOTOHIKO
FUKUNAGA NAOKI
| JPS58188968A | 1983-11-04 | |||
| JPH05129648A | 1993-05-25 | |||
| JPH06104475A | 1994-04-15 | |||
| JPH06260625A | 1994-09-16 | |||
| JPH06125068A | 1994-05-06 |