SEMICONDUCTOR MEMORY DEVICE

Title:

SEMICONDUCTOR MEMORY DEVICE

Document Type and Number:

Japanese Patent JPH0786528

Kind Code:

A

Abstract:

PURPOSE: To increase the capacitor area equivalently and maintain a signal quantity stably without increasing the actual area occupied by a capacitor.

CONSTITUTION: The memory cell of a semiconductor memory device is composed of a MOSFET and a ferrodielectric capacitor. The ferrodielectric capacitor is composed of a lower electrode 8 which is connected to the source region 6 or drain region 5 of the MOSFET, a first ferrodielectric film 11 formed on the lower electrode 8, a middle electrode 10 formed on the first ferrodielectric film 11, a second ferrodielectric film 12 formed on the middle electrode 10 and an upper electrode 9 formed on the second ferrodielectric film 12.

Inventors:

KAWABE TAKESHI
OGIMOTO YASUSHI
YOKOYAMA SEIICHI
ISHIKAWA TOSHIHIRO

Application Number:

JP4435794A

Publication Date:

March 31, 1995

Filing Date:

March 15, 1994

Export Citation:

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Assignee:

SHARP KK

International Classes:

H01L27/04; H01L21/822; H01L21/8242; H01L21/8246; H01L21/8247; H01L27/10; H01L27/105; H01L27/108; H01L29/788; H01L29/792; (IPC1-7): H01L27/10; H01L27/04; H01L21/822; H01L21/8242; H01L27/108; H01L21/8247; H01L29/788; H01L29/792

Attorney, Agent or Firm:

Shintaro Nogawa

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