MANUFACTURE OF SEMICONDUCTOR SUBSTRATE - NIPPON TELEGRAPH & TELEPHONE

Title:

MANUFACTURE OF SEMICONDUCTOR SUBSTRATE

Document Type and Number:

Japanese Patent JPH0653136

Kind Code:

A

Abstract:

PURPOSE: To provide high reproducibility viewed by a step to a main surface of a manufactured Si-based semiconductor substrate formed in a stepped surface with a step viewed by an atomic size level and therefore has dimer and to provide high reproducibility viewed by surface level to it.

CONSTITUTION: The title manufacturing method consists of a process for preparing a semiconductor substrate having an Si-based mirror polished main surface and a process for thermally treating the semiconductor substrate at a temperature of 900°C or higher in hydrogen atmosphere with temperature inclination of one direction along the main surface.

Inventors:

ITO YOSHIO
MORI HIDEFUMI
SUGO MITSURU
TACHIKAWA MASAMI

Application Number:

JP22202192A

Publication Date:

February 25, 1994

Filing Date:

July 29, 1992

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE

International Classes:

H01L21/20; H01L21/324; (IPC1-7): H01L21/20; H01L21/324

Attorney, Agent or Firm:

Shoji Tanaka

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