PURPOSE: To provide a dielectric ceramic composition in which the baking can be carried out at the temperature not higher than 1160°C, the X8R characteristics can be satisfied even though the dielectric constant is higher than 1000, the mechanical strength of the ceramic is high, and furthermore, the temperature change rate of the static capacity when the DC voltage of 50% of the rating voltage is applied depending on the standard of the RB characteristics of JIS C6429, when the thickness of the dielectric ceramic layer is made in a thin layer of 10μm to 15μm, is small being between +15% and -40%.

CONSTITUTION: This dielectric ceramic composition is shown in the general formula: {100-(a+b+c+d+e)}BaTiO3+aZnO+bBi2O3+cMeO2+-dNb2O5+eRe2 O3 (where Me is at least one sort selected from Ti, Zr, and Sn, Re is at least one sort selected from La, Pr, Nd, Sm, Dy, and Er, and a, b, c, d, and e are all mol%), the a, b, c, d, and e are within the following inequalities respectively, 0.5≤a≤4.5, 2.0≤b≤6.0, 0.5≤c≤6.5, 0.5≤d≤4.5, and 0.5≤e≤5.5, and furthermore, 0.05 to 2.5wt.% of the first auxiliary component which consists of a glass mainly of SiO2 is contained in this dielectric ceramic composition.