Title:
【発明の名称】レジストパターン形成方法
Document Type and Number:
Japanese Patent JP2663483
Kind Code:
B2
Abstract:
In a method of processing an article, the article is introduced into a supercritical atmosphere which is formed in a pressure vessel and which atmosphere comprises carbon dioxide. When the article comprises an exposed resist film on a surface layer formed on a substrate, the exposed resist film is selectively removed to leave a predetermined pattern in the supercritical atmosphere and is thus processed into a patterned resist film. After the surface layer is selectively etched through the patterned resist film to form a patterned surface layer, the patterned resist film may be introduced into the supercritical atmosphere to be completely removed from the patterned surface layer. On processing the article, such as a compact disc, a mechanical parts, or the like, the article may be also introduced into the supercritical atmosphere to be cleaned up.
Inventors:
NISHIKAWA MASARU
NAKAGAWA KAZUMICHI
YAMAGUCHI YOICHI
NAKAGAWA KAZUMICHI
YAMAGUCHI YOICHI
Application Number:
JP4719688A
Publication Date:
October 15, 1997
Filing Date:
February 29, 1988
Export Citation:
Assignee:
NISHIKAWA MASARU
HOOYA KK
HOOYA KK
International Classes:
H01L21/304; G03C11/00; G03F7/00; G03F7/30; G03F7/36; G03F7/42; H01L21/027; H01L21/30; (IPC1-7): H01L21/027; G03F7/00
Domestic Patent References:
| JP62229523A | ||||
| JP6311577A | ||||
| JP62152504A |
Attorney, Agent or Firm:
Setsiya Aniya