PURPOSE: To realize a device having high withstand voltage while realizing high speed turn ON operation and excellent reverse recovery performance by setting a shallow diffusion depth of pE layer while forming a heavily doped and lightly doped pE layers alternately.

CONSTITUTION: In order to realize high withstand voltage of 2500V, 4500V, etc., stably, a p layer 1 is formed entirely on the p emitter (pE) side and a fine waving pE layer 2 is formed thereon. Consequently, a Schottky junction is formed for p by means of an anode electrode 3 between the waving pn layers. Furthermore, a waving n+ layer (nE layer) 5 is formed on the n-buffer layer 4 in a Pin structure and in order to realize high speed operation, waving pE layer 2 and nE layer 5 are provided simultaneously. When the thickness of the nE layer 5 is set at 5μm on the nE layer 5 side, for example, a high speed diode having high withstand voltage and Schottky junction for suppressing the leak current can be realized by implanting H+ (proton) or He ions by 10μm deep from the surface of the nE layer 5.