SEMICONDUCTOR DEVICE

Japanese Patent JPS596561

A

PURPOSE:To prevent the contact between an adjacent projection electrode due to the collapse of the uppermost layer by bonding and further prevent the short circuit between an inner lead and a semiconductor device due to the wet of the inner lead and the uppermost layer, by improving the shape of the uppermost layer of the projection electrode for external lead-out. CONSTITUTION:The projection electrode main body (Au) 5 at the uppermost layer of each projection electrode is so formed that the flat shape becomes I- shape, T-shape and reverse U-shape respectively. When the projection electrode wherein the flat shape of the projection electrode main body (Au) 5 is I-shape and the inner lead 6 are bonded, the projection electrode main body (Au) 5 is deformed by bonding as a broken line, and then the expansion of Au in a transverse direction moves to the exposed part 10 of barrier metal in the most part. Therefore, the Au which expands over the maximum width of the projection electrode can be restricted to the minimum, and the movement of Au-Sn eutectic crystal due to the wet of Sn and Au of the inner lead 6 can be also restricted to the minimum. The junction area between the Au and the inner lead 6 effectively increases, because the exposed part 10 is filled with Au by bonding.

SHIMADA OSAMU
YOKOGAWA SHIYUNJI

JP11524782A

January 13, 1984

July 02, 1982

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TOKYO SHIBAURA ELECTRIC CO

H01L21/60; (IPC1-7): H01L21/92

Takahisa Kimura

Next Patent: CARRIER CASE FOR INTEGRATED CIRCUIT