PURPOSE: To enhance pulse-resisting property and reduce the interfacial resistance between a plurality of layers at the time of forming a resistor, by providing a heating resistor layer having a double-layer construction wherein the first layer contains a large amount of oxygen and the second layer contains a small amount of oxygen.
CONSTITUTION: The first layer 9 in the heating resistor layer is made of a Cr- Si alloy containing a large amount of oxygen, while the second layer 10 adjacent to a wiring layer consisting of an adhesive layer 4 and a wiring conductor layer 5 consists of a layer containing a small amount of oxygen. In producing the first layer 9, it is preferable to produce a film of a Cr-Si alloy having a Cr/Si ratio of (20W40)/(80W60) (atomic %), a specific resistance of 1,000W10,000μΩ-cm, a film thickness of 60W6,000 and a desired sheet resistance value by a conventional sputtering method or an oxygen reactive sputtering method using a planar magnetron. In producing the second layer 10, it is preferable to produce a film having a specific resistance of 1,500W3,000μΩ-cm in a thickness of 200W500 by a planar magnetron sputtering method.
| JPH10163002 | CHIP ELECTRONIC COMPONENT AND ITS MANUFACTURE |
| JPS58224763 | THERMAL HEAD |
ISOGAI TOKIO
MITANI MASAO
KAMEI TSUNEAKI
ABE KATSUO
