Title:
ION IMPLANTATION METHOD
Document Type and Number:
Japanese Patent JPS5843512
Kind Code:
A
Abstract:
PURPOSE:To increase accuracy of the amount of impurities in a diffusion layer by performing ion implantation and drive at the same time. CONSTITUTION:A silicon substrate 4 covered with an oxidation film is inserted into a cooling zone 9 via a vacuum valve 11, and the inside air of the cooling zone 9 is exhausted. When the exhaustion is completed, a vacuum valve 10 is opened, and the silicon substrate 4 is placed on a heater block 5 in a heating and ion implantation zone 8. The temperature of the Si substrate 4 reaches about 800 deg.C in a few second. Next, a laser beam from a laser source 3 is irradiated to the Si substrate 4 to raise the temperature of its depth within 1mum from the surface to 1,100 deg.C. The ion implantation is performed to the substrate 4 by implantation of <31>P<+> obtained by converting PH3 from an ion source 1 into plasma. When the ion implantation is finished, the Si substrate 4 is moved to the cooling zone 9 and placed on the cooling block 6. Then the vacuum valve 10 is closed and N2 gas is introduced into the cooling zone 9, then the vacuum valve 11 is opened and the Si substrate 4 is taken out.
Inventors:
INOUE KOUICHI
MONMA NAOHIRO
SAITOU OSAMU
HONMA HIDEO
MONMA NAOHIRO
SAITOU OSAMU
HONMA HIDEO
Application Number:
JP14103281A
Publication Date:
March 14, 1983
Filing Date:
September 09, 1981
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/265; (IPC1-7): H01L21/265
Attorney, Agent or Firm:
Akio Takahashi
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