Title:
【発明の名称】非線形光トランジスタ
Document Type and Number:
Japanese Patent JP3072001
Kind Code:
B2
Abstract:
A nonlinear optical transistor comprises a pair of surface emitting semiconductor laser diodes, a phase modulator including a waveguide confined by a pair of first mirrors in the horizontal direction and located between the pair of surface emitting semiconductor laser diodes and a multiplicity of electrodes for controlling these elements. The transistor is characterized by its input optical signals for controlling the system; its high sensitivity; its capability to generate narrow, circularly symmetrical and single mode output signals; and its ability to carry out a multi-level processing of optical signals as well as computing operations and storage functions. These characteristics are obtained by introducing a pair of Fabry-Perot microresonators, each of the Fabry-Perot microresonators having a vertical optical axis, by utilizing a plurality of multilayer Bragg reflectors, wherein surface coatings are applied to the input faces to increase the reflection index to 1.0, the grating of the distributed Bragg reflectors being located above the phase modulator waveguide and the reference electrode being found on the bottom bases. The device has two input and two output optical contacts.
Inventors:
Svyatoslav Ar.Roma Shevich
Application Number:
JP16973194A
Publication Date:
July 31, 2000
Filing Date:
July 21, 1994
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
G02F1/35; G02F3/00; G02F3/02; H01L27/15; H01L29/78; H01S5/00; H01S5/042; H01S5/06; H01S5/42; H01S5/50; H01S5/026; (IPC1-7): H01L27/15; G02F3/02; H01S5/50
Domestic Patent References:
| JP5243677A |
Other References:
【文献】米国特許5001523(US,A)
Attorney, Agent or Firm:
Hidekazu Miyoshi (1 outside)